Search: onr:"swepub:oai:DiVA.org:liu-87085" >
Sputter-deposited a...
Sputter-deposited a-Si:H for p-i-n photodiodes
-
- Rantzer, Annika (author)
- Linköpings universitet,Institutionen för systemteknik,Tekniska högskolan
-
- Hjörvarsson, B. (author)
- Department of Physics, Uppsala University, Uppsala, Sweden
-
- Persson, Per O. A. (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
-
show more...
-
- Kim, H. (author)
- IBM TJ Watson Research Center, Yorktown Heights, NY, USA
-
- Greene, J. E. (author)
- Department of Materials Science and Frederick Seitz Materials Research Laboratory, University of Illinois, USA
-
- Järrendahl, Kenneth (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
-
- Arwin, Hans (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
-
- Birch, Jens (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
-
show less...
-
(creator_code:org_t)
- English.
- Related links:
-
https://urn.kb.se/re...
Abstract
Subject headings
Close
- DC magnetron sputter deposition is explored as an alternative for fabricating vertically integrated sensor systems in the form of p-i-n diodes of hydrogenated amorphous silican deposited on CMOS integrated circuit substrates in a post-processing step. We focus here on dopant oncorporation and surface morphological evolution during synthesis of the p-i-n diode sensor structures. The Doping was accomplished using doped targets in a mixed H2/Ar environment. Incorporated P concetrations range from 2.62 to 4.8 x 1019 cm-3 with corresponding conductivities, σ, up to 1.4 x10-5 ohm-1cm-1. B contentrations are between 2.79 and 6.7 X 1020 cm-3 with σ = 4 x 10-5 to 4 x 10-2 ohm-1cm-1. The results of the dopant incorporation are in agreement with reported molecular dynamics simulations. The best intrinsic films have a light to dark conductivity ratio of 102 for white light at an intensity of 10 W/m2. The dark conductivity is a 8 x 10-9 ohm-1cm-1. We conclude that dc magnetron sputter deposition is a good candidate for future device fabrication.
Publication and Content Type
- vet (subject category)
- ovr (subject category)
To the university's database