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Chloride-Based CVD ...
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
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- Leone, Stefano (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Pedersen, Henrik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Beyer, Franziska (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Andersson, Sven (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kordina, Olle (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Henry, Anne (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Canino, Andrea (author)
- Consiglio Nazionale delle Ricerche IMM, Catania, Italy
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- La Via, Francesco (author)
- Consiglio Nazionale delle Ricerche IMM, Catania, Italy
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Trans Tech Publications Inc. 2012
- 2012
- English.
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In: Materials Science Forum Vols 717 - 720. - : Trans Tech Publications Inc.. ; , s. 113-116
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
Close
- A review of recently achieved results with the chloride-based CVD on 8 degrees and 4 degrees off-axis and nominally on-axis 4H-SiC wafers is done to clarify the epitaxial growth mechanisms on different off-angle substrates. The process conditions selected for each off-axis angle become even more difficult when running at growth rates of 100 mu m/h or more. A fine-tuning of process parameters, mainly temperature, C/Si ratio and in situ surface preparation is necessary for each Wangle. Some trends related to the surface properties and the effective C/Si ratio existing on the surface prior to and during the epitaxial growth can be observed.
Keyword
- Chloride-based CVD; homoepitaxial growth; substrate off-angle; high growth rate
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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