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X-ray photoemission...
X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors
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- Lloyd Spetz, Anita (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Schmeisser, D. (author)
- Technische Universitaet Cottbus, Germany
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- Baranzahi, Amir (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Wälivaara, B. (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Göpel, W. (author)
- Institut für Physikalische und Theoretische Chemie, Tübingen, Germany
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- Lundström, Ingemar (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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(creator_code:org_t)
- Elsevier, 1997
- 1997
- English.
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In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 299:1-2, s. 183-189
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Platinum-silicon dioxide-silicon carbide, MOSiC, sensors are possible to operate at high temperatures and show a gas sensitivity pattern which is of interest for many applications including exhaust gases from car engines. The introduction of a buffer layer of tantalum silicide between the metal and the silicon dioxide resulted, after an annealing step, in a very good adhesion of the gate contact and fast responding sensors with improved signal stability. Depth profiling using X-ray photoemission and Auger electron spectroscopy showed that the annealing step converts the tantalum silicide to a mixed phase predominantly containing tantalum pentoxide. Tantalum silicide as well as platinum silicide are also present in the metal-oxide interface region.
Keyword
- metal-oxide semiconductor structure; sensors; X-ray photoelectron spectroscopy; Auger electron spectroscopy; silicon carbide
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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