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Reversible hydrogen...
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Baranzahi, AmirLinköpings universitet,Tillämpad Fysik,Tekniska högskolan
(author)
Reversible hydrogen annealing of metal‐oxide‐silicon carbide devices at high temperatures
- Article/chapterEnglish1995
Publisher, publication year, extent ...
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American Institute of Physics (AIP),1995
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-88142
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-88142URI
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https://doi.org/10.1063/1.115163DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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We report on a reversible hydrogen annealing effect observed in platinum-silicon dioxide-silicon carbide structures at temperatures above about 650 degrees C. It appears as a decrease of the inversion capacitance in the presence of hydrogen. This phenomenon is shown to depend on hydrogen atoms, created on the catalytic metal, that pass through the oxide and interact with charge generation sites at the oxide-silicon carbide interface. The consequence of the observation for chemical sensors based on silicon carbide is discussed. The results are phenomenological, since no details of the annealing chemistry could be developed from the present experiments. We find, however, that the annealing process and its reversal have activation energies of about 0.9 eV and 2.9 eV/site,respectively.
Subject headings and genre
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Lloyd Spetz, AnitaLinköpings universitet,Tillämpad Fysik,Tekniska högskolan(Swepub:liu)anill63
(author)
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Lundström, IngemarLinköpings universitet,Tillämpad Fysik,Tekniska högskolan(Swepub:liu)inglu57
(author)
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Linköpings universitetTillämpad Fysik
(creator_code:org_t)
Related titles
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In:Applied Physics Letters: American Institute of Physics (AIP)67:21, s. 3203-32050003-69511077-3118
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