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Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures
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- Ackelid, Ulf (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Armgarth, M. (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Spetz, Anita (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 1986
- 1986
- English.
- In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 7:6, s. 353-355
- Journal article (peer-reviewed)
Abstract
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- Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
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- ref (subject category)
- art (subject category)
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