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Ethanol sensitivity...
Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures
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- Ackelid, Ulf (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Armgarth, M. (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Spetz, Anita (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Lundström, Ingemar (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 1986
- 1986
- English.
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In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 7:6, s. 353-355
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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