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Optically detected ...
Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy
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- Dagnelund, Daniel (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Stehr, Jan E. (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Yu Egorov, A (author)
- St Petersburg Academic University, Russia
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- Chen, Weimin (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Buyanova, Irina (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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(creator_code:org_t)
- American Institute of Physics (AIP), 2013
- 2013
- English.
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In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 102:2, s. 021910-
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https://doi.org/10.1...
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Abstract
Subject headings
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- Defect properties of quaternary GaNAsP/GaP epilayers grown by vapor phase epitaxy (VPE) are studied by photoluminescence and optically detected magnetic resonance techniques. Incorporation of more than 0.6% of nitrogen is found to facilitate formation of several paramagnetic defects which act as competing carrier recombination centers. One of the defects (labeled as Ga-i-D) is identified as a complex defect that has a Ga interstitial (Ga-i) atom residing inside a Ga tetrahedron as its core. A comparison of Ga-i-D with other Ga-i-related defects known in ternary GaNP and GaNAs alloys suggests that this defect configuration is specific to VPE-grown dilute nitrides.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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