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Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
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- Kawahara, Koutarou (author)
- Kyoto University, Japan
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- Thang Trinh, Xuan (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Son Tien, Nguyen (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- American Institute of Physics (AIP), 2013
- 2013
- English.
- In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 102:11
- Journal article (peer-reviewed)
Abstract
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- The Z(1/2) center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z(1/2) center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z(1/2) defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (V-C) determined by electron paramagnetic resonance, suggesting that the Z(1/2) deep level originates from V-C.
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- TECHNOLOGY
- TEKNIKVETENSKAP
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