Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

Funding Agencies|Japan Society for the Promotion of Science|2122600880225078|Swedish Energy Agency||Swedish Research Council VR/Linne LiLI-NFM||Knut and Alice Wallenberg Foundation||
The Z(1/2) center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z(1/2) center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z(1/2) defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (V-C) determined by electron paramagnetic resonance, suggesting that the Z(1/2) deep level originates from V-C.

Thang Trinh, XuanLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)xuatr28 (author)
Son Tien, NguyenLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)nguso90 (author)
Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14 (author)
Suda, JunKyoto University, Japan (author)
Kimoto, TsunenobuKyoto University, Japan (author)
Kyoto University, JapanHalvledarmaterial (creator_code:org_t)

In:Applied Physics Letters: American Institute of Physics (AIP)102:110003-69511077-3118

By the author/editor: Kawahara, Koutar ...; Thang Trinh, Xua ...; Son Tien, Nguyen; Janzén, Erik; Suda, Jun; Kimoto, Tsunenob ...

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