Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC

Boosalis, Alexander (author): Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A.

Hofmann, Tino (author): Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A.

Darakchieva, Vanya (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Yakimova, Rositza (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Schubert, Mathias (author): Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A.

Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, US.A. Halvledarmaterial (creator_code:org_t)

2012-02-29
2012
English.
In: MRS Proceedings Volume 1407. - : Springer Science and Business Media LLC. ; , s. aa20-43

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

By the author/editor: Boosalis, Alexan ...; Hofmann, Tino; Darakchieva, Van ...; Yakimova, Rositz ...; Tiwald, Tom; Schubert, Mathia ...

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