Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC

Boosalis, AlexanderDepartment of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A. (author)

Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

Hofmann, TinoDepartment of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A. (author)
Darakchieva, VanyaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)vanda79 (author)
Yakimova, RositzaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)rosia15 (author)
Tiwald, TomJ.A. Woollam Co., Lincoln, Nebraska, U.S.A. (author)
Schubert, MathiasDepartment of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A. (author)
Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A.Halvledarmaterial (creator_code:org_t)

In:MRS Proceedings Volume 1407: Springer Science and Business Media LLC, s. aa20-43
In:MRS Proceedings: Springer Science and Business Media LLC, s. aa20-430272-91721946-4274

By the author/editor: Boosalis, Alexan ...; Hofmann, Tino; Darakchieva, Van ...; Yakimova, Rositz ...; Tiwald, Tom; Schubert, Mathia ...

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