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Electron Paramagnet...
Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
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- Trinh, Xuan Thang (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Gällström, Andreas (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Nguyen, Son Tian (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Leone, Stefano (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kordina, Olle (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Trans Tech Publications Inc. 2013
- 2013
- English.
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In: Materials Science Forum (Volumes 740 - 742). - : Trans Tech Publications Inc.. ; , s. 385-388
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- Defects in unintentionally Nb-doped 6H-SiC grown by high-temperature chemical vapor deposition were studied by electron paramagnetic resonance (EPR). An EPR spectrum with a hyperfine (hf) structure consisting of ten equal-intensity lines was observed. The hf structure is identified to be due to the hf interaction between an electron spin S=1/2 and a nuclear spin of 93Nb. The hf interaction due to the interaction three nearest Si neighbors was also observed, suggesting the involvement of the C vacancy (VC) in the defect. Only one EPR spectrum was observed in 6H-SiC polytype. The obtained spin-Hamiltonian parameters are similar to that of the Nb-related EPR defect in 4H-SiC, suggesting that the EPR center in 6H-SiC is the NbSiVC complex in the neutral charge state, NbSiVC0. Photoexcitation EPR experiments suggest that the single negative charge state of the NbSiVC complex is located at ~1.3 eV below the conduction band minimum.
Keyword
- Electron Paramagnetic Resonance (EPR)
- Nb
- Split-Vacancy Complex
Publication and Content Type
- ref (subject category)
- kon (subject category)
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