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The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
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- Kakanakova-Georgieva, Anelia (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Nilsson, Daniel (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Trinh, Xuan Thang (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- (creator_code:org_t)
- AIP Publishing, 2013
- 2013
- English.
- In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:13, s. 132113-
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed.
Keyword
- aluminium compounds
- electrical conductivity
- gallium compounds
- III-V semiconductors
- impurity states
- oxygen
- paramagnetic resonance
- silicon
- wide band gap semiconductors
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- ref (subject category)
- art (subject category)
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