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Reversible Transiti...
Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs
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- Han, Sang Sub (author)
- Univ Cent Florida, USA
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- Sattar, Shahid (author)
- Linnéuniversitetet,Institutionen för fysik och elektroteknik (IFE)
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- Kireev, Dmitry (author)
- Univ Texas Austin, USA;Univ Massachusetts, USA
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- Shin, June-Chul (author)
- Univ Cent Florida, USA;Seoul Natl Univ, Republic of Korea
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- Bae, Tae-Sung (author)
- Korea Basic Sci Inst, Republic of Korea
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- Ryu, Hyeon Ih (author)
- Korea Basic Sci Inst, Republic of Korea
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- Cao, Justin (author)
- Univ Cent Florida, USA
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- Shum, Alex Ka (author)
- Univ Cent Florida, USA
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- Kim, Jung Han (author)
- Dong A Univ, Republic of Korea
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- Canali, Carlo M. (author)
- Linnéuniversitetet,Institutionen för fysik och elektroteknik (IFE)
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- Akinwande, Deji (author)
- Univ Texas Austin, USA
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- Lee, Gwan-Hyoung (author)
- Seoul Natl Univ, Republic of Korea
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- Chung, Hee-Suk (author)
- Korea Basic Sci Inst, Republic of Korea
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- Jung, Yeonwoong (author)
- Univ Cent Florida, USA
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(creator_code:org_t)
- American Chemical Society (ACS), 2024
- 2024
- English.
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 24:6, s. 1891-1900
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of similar to 50.30 cm(2) V-1 s(-1) at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- 2D PtTe2 layer
- 2D PtSe2 layer
- anion exchange
- chemical transition
- edge contact
- 2D TMD heterostructure
- Electrotechnology
- Elektroteknik alt Electrical engineering
Publication and Content Type
- ref (subject category)
- art (subject category)
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To the university's database
- By the author/editor
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Han, Sang Sub
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Sattar, Shahid
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Kireev, Dmitry
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Shin, June-Chul
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Bae, Tae-Sung
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Ryu, Hyeon Ih
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show more...
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Cao, Justin
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Shum, Alex Ka
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Kim, Jung Han
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Canali, Carlo M.
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Akinwande, Deji
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Lee, Gwan-Hyoung
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Chung, Hee-Suk
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Jung, Yeonwoong
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
- Articles in the publication
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Nano Letters
- By the university
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Linnaeus University