Optically active erbium-oxygen complexes in GaAs

• Density functional modeling of Er and Er-O complexes in GaAs show that Er impurities at the Ga site are not efficient channels for exciton recombination, but decorative O atoms play crucial roles in inhibiting Er precipitation and in creating the necessary conditions for electron-hole capture. Among the defects studied, the ErGaOAs and ErGa(OAs)2 models have the symmetry and carrier trap location close to the defect responsible for the strong 1.54 µm photoluminescence band in Er, O codoped GaAs.

Subject headings

NATURVETENSKAP  -- Matematik -- Beräkningsmatematik (hsv//swe)

NATURAL SCIENCES  -- Mathematics -- Computational Mathematics (hsv//eng)

Keyword

Scientific Computing

Teknisk-vetenskapliga beräkningar

Publication and Content Type

ref (subject category)

art (subject category)