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Photo-dissociation ...
Photo-dissociation of hydrogen passivated dopants in gallium arsenide
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- Tong, Longyu (author)
- National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork
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Larsson, Andreas (author)
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- Nolan, Michael (author)
- National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork
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- Murtagh, MArtin E. (author)
- National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork
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- Greer, James C. (author)
- National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork
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- Barbe, Michel (author)
- Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex
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- Bailly, Francis (author)
- Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex
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- Chevallier, Jacques (author)
- Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex
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- Silvestre, F.S. (author)
- IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex
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- Loridant-Bernard, D. (author)
- IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex
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- Constant, E. (author)
- IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex
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- Constant, F.M. (author)
- Laboratoire de Spectrochimie Infrarouge et Raman, UPR2631L CNRS, Université des Sciences et Techniques de Lille
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National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A Briand, 92195 Meudon Cedex (creator_code:org_t)
- 2002
- 2002
- English.
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In: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186:1-4, s. 234-239
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.
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- ref (subject category)
- art (subject category)
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- By the author/editor
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Tong, Longyu
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Larsson, Andreas
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Nolan, Michael
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Murtagh, MArtin ...
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Greer, James C.
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Barbe, Michel
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show more...
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Bailly, Francis
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Chevallier, Jacq ...
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Silvestre, F.S.
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Loridant-Bernard ...
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Constant, E.
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Constant, F.M.
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show less...
- Articles in the publication
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Nuclear Instrume ...
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Luleå University of Technology