Photo-dissociation of hydrogen passivated dopants in gallium arsenide

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Photo-dissociation of hydrogen passivated dopants in gallium arsenide

Tong, Longyu (author): National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork

Larsson, Andreas (author)

Nolan, Michael (author): National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork

Murtagh, MArtin E. (author): National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork

Greer, James C. (author): National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork

Barbe, Michel (author): Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex

Bailly, Francis (author): Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex

Chevallier, Jacques (author): Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex

Silvestre, F.S. (author): IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex

Loridant-Bernard, D. (author): IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex

Constant, E. (author): IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex

Constant, F.M. (author): Laboratoire de Spectrochimie Infrarouge et Raman, UPR2631L CNRS, Université des Sciences et Techniques de Lille

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National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A Briand, 92195 Meudon Cedex (creator_code:org_t)

2002
2002
English.
In: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186:1-4, s. 234-239

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Journal article (peer-reviewed)

Abstract Subject headings

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.

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By the author/editor: Tong, Longyu; Larsson, Andreas; Nolan, Michael; Murtagh, MArtin ...; Greer, James C.; Barbe, Michel; show more...; Bailly, Francis; Chevallier, Jacq ...; Silvestre, F.S.; Loridant-Bernard ...; Constant, E.; Constant, F.M.; show less...

Articles in the publication: Nuclear Instrume ...

By the university: Luleå University of Technology

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Photo-dissociation of hydrogen passivated dopants in gallium arsenide

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