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Intrinsic defects a...
Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si
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- Jones, R. (author)
- Department of Physics, University of Exeter, UK
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- Coomer, B. J. (author)
- Department of Physics, University of Exeter, UK
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- Goss, J. P. (author)
- Department of Physics, University of Exeter, UK
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- Öberg, Sven (author)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Briddon, P. R. (author)
- Department of Physics, The University of Newcastle upon Tyne, Newcastle upon Tyne, UK
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(creator_code:org_t)
- 2000
- 2000
- English.
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In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 222:1, s. 133-140
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https://ltu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri- and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.
Subject headings
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Keyword
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publication and Content Type
- ref (subject category)
- art (subject category)
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