Search: onr:"swepub:oai:DiVA.org:ltu-94818" >
Anisotropic phonon ...
Anisotropic phonon and magnon vibration and gate-tunable optoelectronic properties of nickel thiophosphite
-
- Muhammad, Zahir (author)
- Hefei Innovation Research Institute, School of Integrated Circuit Science and Engineering, Beihang University, Hefei 230013, People’s Republic of China
-
- Szpakowski, Jan (author)
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
-
- Abbas, Ghulam Gilani (author)
- Luleå tekniska universitet,Materialvetenskap
-
show more...
-
- Zu, Lin (author)
- Hefei Innovation Research Institute, School of Integrated Circuit Science and Engineering, Beihang University, Hefei 230013, People’s Republic of China
-
- Islam, Rajibul (author)
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
-
- Wang, Yan (author)
- School of Microelectronics, Hefei University of Technology, Hefei 230009, People’s Republic of China
-
- Wali, Faiz (author)
- College of Physics and Optoelectronic Engineering, Shenzhen University, Nanhai Ave. 3688, Shenzhen, Guangdong 518060, People’s Republic of China
-
- Karmakar, Arka (author)
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
-
- Molas, Maciej R. (author)
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
-
- Zhang, Yue (author)
- Hefei Innovation Research Institute, School of Integrated Circuit Science and Engineering, Beihang University, Hefei 230013, People’s Republic of China
-
- Zhu, Ling (author)
- College of Physics and Optoelectronic Engineering, Shenzhen University, Nanhai Ave. 3688, Shenzhen, Guangdong 518060, People’s Republic of China
-
- Zhao, Weisheng (author)
- Hefei Innovation Research Institute, School of Integrated Circuit Science and Engineering, Beihang University, Hefei 230013, People’s Republic of China
-
- Zhang, Han (author)
- College of Physics and Optoelectronic Engineering, Shenzhen University, Nanhai Ave. 3688, Shenzhen, Guangdong 518060, People’s Republic of China
-
show less...
-
Hefei Innovation Research Institute, School of Integrated Circuit Science and Engineering, Beihang University, Hefei 230013, People’s Republic of China Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Pasteura 5, 02-093 Warsaw, Poland (creator_code:org_t)
- 2023-01-10
- 2023
- English.
-
In: 2D Materials. - : IOP Publishing. - 2053-1583. ; 10:2
- Related links:
-
https://doi.org/10.1...
-
show more...
-
https://ltu.diva-por... (primary) (Raw object)
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Transition metal phosphorus trichalcogenides retain spin-charge coupling and lattice vibrations in different layers, which are useful for spintronic and optoelectronic devices. The phonon, magnons and excitonic properties of two-dimensional ternary nickel-phosphorus trisulfides (NiPS3) are investigated using Raman spectroscopy and photoluminescence (PL) study. With magnetic exchange interaction, an exotic phonon scattering degenerates the optical phonons into in-plane Ag and Bg modes. We have observed eight Raman modes with two acoustic anisotropic magnon modes (M1, M2) below the critical temperature for co-(XX), while only M1 at cross (XY) polarizations. The M1 mode is coupled with the phonon Bg mode that can survive after transition temperature. The phonon and magnon modes soften with variations in temperature, which is attributed to anharmonic phonon–phonon coupling and interlayer forces. The polarized Raman shows the two-fold and four-fold symmetry orientations of the phonon and magnon modes, respectively, which exhibit strong in-plane anisotropic phonon/magnon. The PL spectra revealed the existence of bound excitonic features and ensemble emitters in NiPS3. The robust interlayer excitation and structural stability further revealed the optothermal properties. Moreover, the fabricated field-effect transistor on NiPS3 reveals p-type semiconducting nature with an ON/OFF ratio of 5 × 106 and mobility of ∼16.34 cm2 V−1 s−1. In contrast, the rectification ratio indicates their diode characteristics. Similarly, the photocurrent is enhanced by changing the wavelength of light, which shows the potential for optoelectronics. The strong spin-charge interaction provides new insights into these materials’ magneto-optical and thermal properties for memory devices.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- single crystals
- 2D ternary compounds
- anisotropic phonon and magnon
- DFT
- optoelectronics devices
- Applied Physics
- Tillämpad fysik
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
-
Muhammad, Zahir
-
Szpakowski, Jan
-
Abbas, Ghulam Gi ...
-
Zu, Lin
-
Islam, Rajibul
-
Wang, Yan
-
show more...
-
Wali, Faiz
-
Karmakar, Arka
-
Molas, Maciej R.
-
Zhang, Yue
-
Zhu, Ling
-
Zhao, Weisheng
-
Zhang, Han
-
show less...
- About the subject
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
-
and Condensed Matter ...
- Articles in the publication
-
2D Materials
- By the university
-
Luleå University of Technology