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Surface State Effec...
Surface State Effects on N+P Doped Electron Detector
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- Esebamen, Omeime (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),Elektronik avd
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- Hammarling, Krister (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- Thungström, Göran (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- Nilsson, Hans-Erik (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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(creator_code:org_t)
- 2011
- 2011
- English.
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In: Journal of Instrumentation. - 1748-0221. ; 6:12, s. Art. no. C12019-
- Related links:
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http://iopscience.io...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
Close
- Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocityVs, there is no visible effect with respect tofixed oxide chargeQfotherwise known as interface fixed charge density.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- Interaction of radiation with matter; Detector modelling and simulations II (electric fields
- charge transport
- multiplication and induction
- pulse formation
- electron emission
Publication and Content Type
- ref (subject category)
- art (subject category)
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