Surface State Effects on N+P Doped Electron Detector

• Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocityVs, there is no visible effect with respect tofixed oxide chargeQfotherwise known as interface fixed charge density.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

Interaction of radiation with matter; Detector modelling and simulations II (electric fields

charge transport

multiplication and induction

pulse formation

electron emission

Publication and Content Type

ref (subject category)

art (subject category)