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The Effect of Diffe...
The Effect of Different Transport Models in Simulation of High Frequency 4H-SiC and 6H-SiC Vertical MESFETs
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- Bertilsson, Kent (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden
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- Nilsson, Hans-Erik (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden
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- Hjelm, Mats (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden, Department of Solid State Electronics, Kungl. Tekniska Högskolan (KTH), Electrum, S-164 40 Kista, Sweden
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- Petersson, Sture (author)
- KTH,Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),Mikroelektronik och informationsteknik, IMIT,Department of Solid State Electronics, Kungl. Tekniska Högskolan (KTH), Electrum, S-164 40 Kista, Sweden
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- Käckell, P. (author)
- Käckell, P., Institut Für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1, 07743 Jena, Germany
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Persson, Clas (author)
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(creator_code:org_t)
- 2001
- 2001
- English.
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In: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 45:5, s. 645-653
- Related links:
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https://doi.org/10.1...
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Abstract
Subject headings
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- A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC Short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- 4H-SiC
- 6H-SiC
- vertical MESFET
- Electrical engineering, electronics and photonics
- Elektroteknik, elektronik och fotonik
- NATURAL SCIENCES
Publication and Content Type
- ref (subject category)
- art (subject category)
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