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Depth of interactio...
Depth of interaction and bias voltage dependence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays
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- Fröjdh, Erik (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- Fröjdh, Christer (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- Gimenez, E (author)
- Diamond Light Source, Didcot, Oxfordshire OX11 0DE, United Kingdom
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- Maneuski, D (author)
- University of Glasgow, Glasgow G12 8QQ, United Kingdom
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- Marchal, J (author)
- Diamond Light Source, Didcot, Oxfordshire OX11 0DE, United Kingdom
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- Norlin, Börje (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- O'Shea, V (author)
- University of Glasgow, Glasgow G12 8QQ, United Kingdom
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- Stewart, G (author)
- University of Glasgow, Glasgow G12 8QQ, United Kingdom
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- Wilhelm, H (author)
- Diamond Light Source, Didcot, Oxfordshire OX11 0DE, United Kingdom
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- Modh Zain, R (author)
- University of Glasgow, Glasgow G12 8QQ, United Kingdom
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- Thungström, Göran (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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(creator_code:org_t)
- 2012
- 2012
- English.
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In: Journal of Instrumentation. - 1748-0221. ; 7:3, s. Art. no. C03002-
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Abstract
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- High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20Όm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110Όm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of ∌20 degrees to the surface and then passed through ∌25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field. © 2012 IOP Publishing Ltd and Sissa Medialab srl.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Detector design and construction technologies and materials; X-ray detectors
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Fröjdh, Erik
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Fröjdh, Christer
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Gimenez, E
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Maneuski, D
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Marchal, J
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Norlin, Börje
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show more...
-
O'Shea, V
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Stewart, G
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Wilhelm, H
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Modh Zain, R
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Thungström, Göra ...
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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Journal of Instr ...
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Mid Sweden University