A Different Approach of Determining the Responsivity of n+p Detectors Using Scanning Electron Microscopy

• This paper explores an alternative to the standard method of studying the responsivities (the input—output gain) and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n+p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n+p doped detectors as a function of the electron radiation energy and other interface parameters.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Condensed matter: electrical

magnetic and optical

Electronics and devices

Semiconductors

Surfaces

interfaces and thin films

Optics

quantum optics and lasers

Publication and Content Type

ref (subject category)

art (subject category)