Search: onr:"swepub:oai:DiVA.org:miun-2873" >
Calculation of latt...
Calculation of lattice heating in SiC RF power devices
-
- Bertilsson, Kent (author)
- KTH,Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),Halvledarlaboratoriet
-
Harris, C (author)
-
- Nilsson, Hans-Erik (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
-
(creator_code:org_t)
- Elsevier BV, 2004
- 2004
- English.
-
In: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:12, s. 1721-1725
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
show less...
Abstract
Subject headings
Close
- Silicon carbide MESFET devices are suitable for high-speed and high-power applications. In this paper we are studying thermal effects in 4H-SiC RF power devices. The simulations are based on a combination of 2D device simulations for the electrical transport, and 3D thermal simulations for the lattice heating. We show that the method gives good accuracy, efficiency, flexibility and capacity dealing with tasks, where a 2D coupled electrical-thermal simulation is not sufficient. We also present an improvement of Roschke and Schwierz mobility model, based on Monte Carlo simulations for the temperature dependencies of the mobility parameters beta and v(sat).
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- SiC
- MESFET
- Thermal Effects
- Device modeling
- Electrical engineering, electronics and photonics
- Elektroteknik, elektronik och fotonik
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database