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A Monte Carlo Study of low field transport in Al doped 4H-SiC
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- Martinez, A (author)
- Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-16440 Stockholm
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- Hjelm, Mats (author)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- Lindefelt, Ulf (author)
- Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-16440 Stockholm
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- 2001
- 2001
- English.
- In: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 184:1-4, s. 173-177
- Journal article (peer-reviewed)
Abstract
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- The ohmic transport of holes in p-type aluminum-doped 4H-SiC samples is investigated using a Monte Carlo (MC) tool based on a full-potential band structure. The temperature and doping dependence of the hole mobility and its anisotropy are calculated and discussed from a physical point of view, where we stress the importance of considering two-band conduction. Acoustic and optical phonon scattering, as well as ionized and neutral impurity scattering, have been considered. The MC program considers incomplete ionization of impurity atoms, and we assume an impurity level with the ionization energy 0.2 eV, corresponding to Al-doped samples. © 2001 Published by Elsevier Science B.V
Keyword
- 4H-SiC
- Anisotropy
- Mobility
- Monte Carlo simulation
- NATURAL SCIENCES
- NATURVETENSKAP
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- ref (subject category)
- art (subject category)
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