Processing and characterization of a position sensitive lateral-effect metal oxide semiconductor detector

• Position sensingdetectors (PSDs) are useful in many applications, such as vibration, displacement, and triangulation measurements. In this paper we present a lateral-effect metal oxide semiconductor PSD with switchingcapability fabricated by our group. The detector can be switched off by the application of 0V on the substrate and 0.2V on the gate. A linear current-position behaviour is exhibited by the detector at a substrate bias of both 5 and 10V with the gate at 0V. There is no effect on the linearity when the substrate voltage is changed from 5 to 10V. The non-linearity is within 0.2% at a distance of 71.5mm from origin for 5, 10 and 15mm device length.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

MOS ITO PSD position sensitive detector anti reflective coating

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publication and Content Type

ref (subject category)

art (subject category)