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Understanding dipole formation at dielectric/dielectric hetero-interface

Lixing, Zhou (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Xiaolei, Wang (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Kai, Han (author)
Dept. of Phys. & Electron. Sci., Weifang Univ., Weifang, China
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Xueli, Ma (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Yanrong, Wang (author)
Microelectron. Dept., North China Univ. of Technol., Beijing, China
Jinjuan, Xiang (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Hong, Yang (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Jing, Zhang (author)
Microelectron. Dept., North China Univ. of Technol., Beijing, China
Chao, Zhao (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Tianchun, Ye (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Radamson, Henry H. (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China,Detektorer och fotonik
Wenwu, Wang (author)
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
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Key Lab of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China Dept. of Phys. & Electron. Sci., Weifang Univ., Weifang, China (creator_code:org_t)
AIP Publishing, 2018
2018
English.
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 113:18
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Band alignment and dipole formation at the hetero-interface still remain fascinating and, hence, are being intensively investigated. In this study, we experimentally investigate the dipole formation by employing a dielectric/dielectric (Al2O3/GeO2) interface. We investigate the dipole dependence on various post-deposition annealing (PDA) ambiences from the viewpoints of electrical extraction and the X-ray photoelectron spectroscopy measurement. The core level shift at the Al2O3/GeO2 interface is consistent with the dipole changes in various PDA ambiences. We discover that the dipole formation can be well explained by the interface gap state and charge neutrality level theory. These results further confirm the feasibility of gap state theory in explaining the band alignment at hetero-junctions. This study can be a booster to enhance the comprehension of dipole origin at hetero-junction interfaces.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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