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Study of silicon ni...
Study of silicon nitride inner spacer formation in process of gate-all-around nano-transistors
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Li, J. (author)
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Li, Y. (author)
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Zhou, N. (author)
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Xiong, W. (author)
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Wang, G. (author)
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Zhang, Q. (author)
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Du, A. (author)
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Gao, J. (author)
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Kong, Z. (author)
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Lin, H. (author)
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Xiang, J. (author)
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Li, C. (author)
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Yin, X. (author)
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Wang, X. (author)
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Yang, H. (author)
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Ma, X. (author)
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Han, J. (author)
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Zhang, J. (author)
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Hu, T. (author)
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Cao, Z. (author)
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Yang, T. (author)
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Yin, H. (author)
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Zhu, H. (author)
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Luo, J. (author)
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Wang, W. (author)
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- Radamson, Henry H. (author)
- Mittuniversitetet,Institutionen för elektronikkonstruktion,Chinese Academy of Sciences, Beijing, 100029, China;
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(creator_code:org_t)
- 2020-04-20
- 2020
- English.
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In: Nanomaterials. - : MDPI AG. - 2079-4991. ; 10:4
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https://miun.diva-po... (primary) (Raw object)
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Abstract
Subject headings
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- Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device dimensions. The preparation of inner spacers is one of the most critical processes for GAA nano-scale transistors. This study focuses on two key processes: Inner spacer film conformal deposition and accurate etching. The results show that low pressure chemical vapor deposition (LPCVD) silicon nitride has a good film filling effect; a precise and controllable silicon nitride inner spacer structure is prepared by using an inductively coupled plasma (ICP) tool and a new gas mixtures of CH2F2/CH4/O2/Ar. Silicon nitride inner spacer etch has a high etch selectivity ratio, exceeding 100:1 to Si and more than 30:1 to SiO2. High anisotropy with an excellent vertical/lateral etch ratio exceeding 80:1 is successfully demonstrated. It also provides a solution to the key process challenges of nano-transistors beyond 5 nm node. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Field effect transistor
- Gate-all-around (GAA)
- High anisotropy
- High etch selectivity
- Inner spacer
- Nanosheet
- Nanostructure manufacture
- Nanowire
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
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Li, J.
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Li, Y.
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Zhou, N.
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Xiong, W.
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Wang, G.
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Zhang, Q.
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show more...
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Du, A.
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Gao, J.
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Kong, Z.
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Lin, H.
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Xiang, J.
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Li, C.
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Yin, X.
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Wang, X.
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Yang, H.
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Ma, X.
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Han, J.
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Zhang, J.
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Hu, T.
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Cao, Z.
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Yang, T.
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Yin, H.
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Zhu, H.
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Luo, J.
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Wang, W.
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Radamson, Henry ...
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Nanomaterials
- By the university
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Mid Sweden University