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  • Radamson, Henry H.Mittuniversitetet,Institutionen för elektronikkonstruktion,Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China. (author)

State of the Art and Future Perspectives in Advanced CMOS Technology

  • Article/chapterEnglish2020

Publisher, publication year, extent ...

  • 2020-08-07
  • MDPI AG,2020
  • electronicrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:miun-39876
  • https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-39876URI
  • https://doi.org/10.3390/nano10081555DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:for swepub-publicationtype

Notes

  • The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Zhu, HuilongChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Wu, ZhenhuaChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • He, XiaobinChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Lin, HongxiaoChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China. (author)
  • Liu, JinbiaoChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Xiang, JinjuanChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Kong, ZhenzhenChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Xiong, WenjuanChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China. (author)
  • Li, JunjieChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China. (author)
  • Cui, HushanJiangsu Leuven Instruments, Xuzhou 221300, Jiangsu, Peoples R China. (author)
  • Gao, JianfengChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Yang, HongChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Du, YongChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China. (author)
  • Xu, BuqingChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China. (author)
  • Li, BenGuangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China. (author)
  • Zhao, XueweiChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Sci & Technol China, Sch Cybersci, Hefei 230026, Peoples R China. (author)
  • Yu, JiahanChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Dong, YanChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. (author)
  • Wang, GuileiChinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China. (author)
  • MittuniversitetetInstitutionen för elektronikkonstruktion (creator_code:org_t)

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  • In:Nanomaterials: MDPI AG10:82079-4991

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