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Silicon Nanowires for Gas Sensing : A Review

Akbari-Saatlu, Mehdi (author)
Mittuniversitetet,Institutionen för elektronikkonstruktion
Procek, Marcin, 1987- (author)
Mittuniversitetet,Institutionen för elektronikkonstruktion,Silesian University of Technology, 2 Krzywoustego St., 44-100 Gliwice, Poland
Mattsson, Claes, 1978- (author)
Mittuniversitetet,Institutionen för elektronikkonstruktion
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Thungström, Göran, 1960- (author)
Mittuniversitetet,Institutionen för elektronikkonstruktion
Nilsson, Hans-Erik, 1965- (author)
Mittuniversitetet,Institutionen för elektronikkonstruktion
Xiong, Wenjuan (author)
Guangdong Greater Bay Area Institute of Integrated Circuit and System; Chinese Academy of Sciences; University of Chinese Academy of Sciences
Xu, Buqing (author)
Guangdong Greater Bay Area Institute of Integrated Circuit and System; Chinese Academy of Sciences; University of Chinese Academy of Sciences
Li, You (author)
Guangdong Greater Bay Area Institute of Integrated Circuit and System; Chinese Academy of Sciences; University of Chinese Academy of Sciences
Radamson, Henry H. (author)
Mittuniversitetet,Institutionen för elektronikkonstruktion,Guangdong Greater Bay Area Institute of Integrated Circuit and System; Chinese Academy of Sciences; University of Chinese Academy of Sciences
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 (creator_code:org_t)
2020-11-06
2020
English.
In: Nanomaterials. - : MDPI AG. - 2079-4991. ; 10:11
  • Research review (peer-reviewed)
Abstract Subject headings
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  • The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

silicon nanowire; gas sensor; functionalization; top-down fabrication; bottom-up fabrication; heterostructures; metal oxides

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