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GaAs Medipix2 hybri...
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Kostamo, PasiHelsinki University of Technology
(author)
GaAs Medipix2 hybrid pixel detector
- Article/chapterEnglish2008
Publisher, publication year, extent ...
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Elsevier,2008
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:miun-7710
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https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-7710URI
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https://doi.org/10.1016/j.nima.2008.03.050DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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9th International Workshop on Radiation Imaging Detectors, JUL 22-26, 2007, Nuremberg, GERMANY
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A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.
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Nenonen, SeppoOxford Instruments Analythical Oy
(author)
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Vähänen, SamiVTT
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Tlustos, LukasCERN
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Fröjdh, ChristerMittuniversitetet,Institutionen för informationsteknologi och medier (-2013),STC(Swepub:miun)chrfro
(author)
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Campbell, MichaelCERN
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Zhilyaev, YuriYoffe Institute
(author)
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Lipsanen, HarriHelsinki University of Technology
(author)
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Helsinki University of TechnologyOxford Instruments Analythical Oy
(creator_code:org_t)
Related titles
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In:Nuclear Instruments and Methods in Physics Research Section A: Elsevier591:1, s. 174-1770168-90021872-9576
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