Processing and characterization of a MEDIPIX2-compatible silicon sensor with 220 mu m pixel size

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Fröjdh, Anna,1986-Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013) (author)

Processing and characterization of a MEDIPIX2-compatible silicon sensor with 220 mu m pixel size

Article/chapterEnglish2011

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Elsevier BV,2011
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LIBRIS-ID:oai:DiVA.org:miun-9672
https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-9672URI
https://doi.org/10.1016/j.nima.2010.06.128DOI

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Language:English
Summary in:English

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Pixellated silicon detectors with a pixel size of 220 um have been fabricated at Mid Sweden University. The detectors will be bonded to the MEDIPIX2 [1] readout chip. The purpose is to investigate the performance of an energy sensitive X-ray imaging sensor with reduced charge sharing.The detectors were fabricated on high purity silicon with a wafer thickness of 500 um and a resistivity of more than 15 kohmcm. One reason for the choice of material was to get experience for future work with very thick detectors requiring ultra high resistivity in order to be depleted. During the initial work in this project some issued were found concerning inter pixel resistance and the efficiency of the guard rings. This led to a study of existing papers on the subject [2,3,4,5] and to extensive simulations of the electric field and the charge transport in different parts of the device.A modified process has been developed using alternating p+ and n+ guard rings and an outer n+ doping. The results of the simulations and the process will be described as well as an outline for a process for fabrication of very thick detectors with limited guard ring extension.References[1] - X. Llopart, M. Campbell, R. Dinapoli, D. San Segundo and E. Pernigotti, IEEE Trans. Nucl. Sci., vol. 49, 2279-2283, October 2002.[2] – L. Evensen, A. Hanneborg, B Sundby Avset, M. Mese, Nuclear Instruments and Methods in Physics Research A 337 (1993) 44 – 52[3] – T. Pavalainen, T. Tuuva, K. Leinonen, Nuclear Instruments and Methods in Physics Research A 573 (2007) 277 – 279[4] – Z. Li, W. Huang, L. J. Zhao, IEEE Trans. Nucl. Sci., vol. 47, No. 3. 729 – 735 , June 2000.[5] – D. Han, C. Wang, G. Wang, S. Du, L. Shen, X. Tian, X. Zhang, IEEE Transactions on Electron devices, Vol. 50, No. 2, 537 – 540, February 2003

Subject headings and genre

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
X-ray spectroscopy; Pixel detector; MEDIPIX; Charge sharing
Electrical engineering, electronics and photonics
Elektroteknik, elektronik och fotonik

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Fröjdh, Erik,1984-Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),STC(Swepub:miun)erifro (author)
Thungström, GöranMittuniversitetet,Institutionen för informationsteknologi och medier (-2013),Electronics design division(Swepub:miun)gorthu (author)
Fröjdh, Christer,1952-Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),STC(Swepub:miun)chrfro (author)
Norlin, Börje,1967-Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013),STC(Swepub:miun)bornor (author)
MittuniversitetetInstitutionen för informationsteknologi och medier (-2013) (creator_code:org_t)

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In:Nuclear Instruments and Methods in Physics Research Section A: Elsevier BV633:Suppl 1, s. S78-S800168-90021872-9576

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