Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

(creator_code:org_t)

2010
2010
English.
In: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. - 9781424485758 ; , s. 127-130

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Abstract Subject headings

GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C. ©2010 IEEE.

By the author/editor: Edwards, Michael; Vittoz, S.; Amen, Rafael; Rufer, L.; Johander, Per; Bowen, C.R.

About the subject

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