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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02086naa a2200349 4500 | |
| 001 | oai:DiVA.org:ri-13432 | |
| 003 | SwePub | |
| 008 | 160922s2010 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-134322 URI |
| 024 | 7 | a https://doi.org/10.1109/ASDAM.2010.56663202 DOI |
| 040 | a (SwePub)ri | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a kon2 swepub-publicationtype |
| 100 | 1 | a Edwards, Michaelu University of Bath4 aut |
| 245 | 1 0 | a Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments |
| 264 | 1 | c 2010 |
| 338 | a print2 rdacarrier | |
| 520 | a GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C. ©2010 IEEE. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Materialteknik0 (SwePub)2052 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Materials Engineering0 (SwePub)2052 hsv//eng |
| 700 | 1 | a Vittoz, S.u CNRS4 aut |
| 700 | 1 | a Amen, Rafaelu RISE,IVF4 aut |
| 700 | 1 | a Rufer, L.u CNRS4 aut |
| 700 | 1 | a Johander, Peru RISE,IVF4 aut |
| 700 | 1 | a Bowen, C.R.u University of Bath4 aut |
| 710 | 2 | a University of Bathb CNRS4 org |
| 773 | 0 | t Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010g , s. 127-130q <127-130z 9781424485758 |
| 856 | 4 | u http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5666320 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-13432 |
| 856 | 4 8 | u https://doi.org/10.1109/ASDAM.2010.5666320 |
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