Reliability investigation on SiC BJT power module

• In this paper reliability investigation results for a power module fully based on silicon carbide (SiC) devices are presented. The module comprises four SiC bipolar junction transistors (BJT) and four SiC diodes in half-bridge configuration and is part of a newly developed 3-phase inverter for construction vehicles as well as for passenger car applications. The reliability investigations include electro-thermal and thermo-mechanical finite element simulations as well as power cycling tests with subsequent failure analyses. Furthermore, a double-sided cooling approach for the SiC BJT power module will be described and its thermal performance compared to the single-sided cooling version. 

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Bridges

Electric power systems

Energy management

Finite element method

Intelligent robots

Power electronics

Reliability

Silicon carbide

Construction vehicle

Double-sided cooling

Finite element simulations

Reliability investigations

SiC bipolar junction transistors

Silicon carbides (SiC)

Thermal Performance

Thermo-mechanical

Bipolar transistors

Publication and Content Type

ref (subject category)

kon (subject category)