Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

Elahipanah, Hossein (author): KTH,Integrerade komponenter och kretsar,Ascatron AB, Sweden

Östling, Mikael (author): KTH,Integrerade komponenter och kretsar,KTH Royal Institute of Technology, Sweden

(creator_code:org_t)

Trans Tech Publications Inc. 2017
2017
English.
In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications Inc.. - 9783035710434 ; , s. 455-458

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.4...; https://urn.kb.se/re...; show less...

Abstract Subject headings

1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers, as well as grid size and spacing dimensions, in order to obtain low on-resistance and reasonable leakage current even at high temperatures. The device behavior at temperatures ranging from 25 to 250ºC is analyzed and measured on wafer level. The forward voltage drop of 1.1 V at 100 A/cm2 and 3.8 V at 1000 A/cm2 is measured, respectively. At reverse voltage of 1 kV, a leakage current density below 0.1 μA/cm2 and below 0.1 mA/cm2 is measured at 25 and 250ºC, respectively. This proves the effective shielding effect of the BG-JBS design and provides benefits in high voltage applications, particularly for high temperature operation.

TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

By the author/editor: Elahipanah, Hoss ...; Thierry-Jebali, ...; Reshanov, S. A.; Kaplan, W.; Zhang, A.; Lim, Jang-Kwon; show more...; Bakowski, Mietek; Östling, Mikael; Schöner, A.; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

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