Photoluminescence photoresponse from InSb/InAs-based quantum dot structures

• InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 μm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 μm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 μm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.

Subject headings

NATURVETENSKAP  -- Data- och informationsvetenskap (hsv//swe)

NATURAL SCIENCES  -- Computer and Information Sciences (hsv//eng)

NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

Keyword

Diodes

Indium antimonides

Indium arsenide

Photodetectors

Photoluminescence

Semiconductor quantum dots

Semiconductor quantum wells

Vapors

Physics

Publication and Content Type

ref (subject category)

art (subject category)