Search: onr:"swepub:oai:DiVA.org:ri-35494" >
Full epitaxial tren...
Full epitaxial trench type buried grid SiC JBS diodes
-
Reshanov, S. A. (author)
-
Schöner, A. (author)
-
- Kaplan, W. (author)
- RISE,Acreo
-
show more...
-
Zhang, Andy (author)
-
- Lim, Jang-Kwon (author)
- RISE,Acreo
-
- Bakowskib, M. (author)
- RISE,Acreo
-
show less...
-
(creator_code:org_t)
- The Electrochemical Society, 2014
- 2014
- English.
-
In: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; , s. 289-293
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
show less...
Abstract
Subject headings
Close
- The paper presents the advanced concept of fully epitaxial SiC junction barrier Schottky (JBS) diodes. It combines trench etching with embedded epitaxial re-growth and enables cost-efficient manufacturing. Fabricated devices are rated for 20A / 1200V and have leakage currents below 0.1μA at 1000V blocking voltage.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Gallium nitride
- Leakage currents
- Nitrides
- Schottky barrier diodes
- Silicon
- Blocking voltage
- Cost-efficient
- Fabricated device
- Jbs diodes
- Junction barrier Schottky diodes
- Re-growth
- Trench etching
- Silicon carbide
Publication and Content Type
- ref (subject category)
- kon (subject category)
Find in a library
To the university's database