Full epitaxial trench type buried grid SiC JBS diodes

• The paper presents the advanced concept of fully epitaxial SiC junction barrier Schottky (JBS) diodes. It combines trench etching with embedded epitaxial re-growth and enables cost-efficient manufacturing. Fabricated devices are rated for 20A / 1200V and have leakage currents below 0.1μA at 1000V blocking voltage.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Gallium nitride

Leakage currents

Nitrides

Schottky barrier diodes

Silicon

Blocking voltage

Cost-efficient

Fabricated device

Jbs diodes

Junction barrier Schottky diodes

Re-growth

Trench etching

Silicon carbide

Publication and Content Type

ref (subject category)

kon (subject category)