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Reduction of density of 4H-SiC/SiO2 interface traps by pre-oxidation phosphorus implantation
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- Sledziewski, Tomasz (author)
- Lehrstuhl für Angewandte Physik, Germany
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- Mikhaylov, Aleksey I. (author)
- RISE,Acreo,SPbETU 'LETI', Russia
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- Reshanov, Sergey A. (author)
- Ascatron, Sweden
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- (creator_code:org_t)
- 2014
- 2014
- English.
- In: Materials Science Forum. - 9783038350101 ; , s. 575-578
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- The effect of phosphorus (P) on the electrical properties of the 4H-SiC/SiO2 interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found from C-V measurements. Conductance method measurements revealed a significant reduction of density of interface traps Dit with energy EC-Eit > 0.3 V for P+-implanted samples with [P]interface = 1.5 · 1018 cm-3 in the SiC layer at the interface. .
Keyword
- Conductance method
- Interface traps
- Mos interface
- Phosphorus ion implantation
- Electric properties
- Ion implantation
- Oxidation
- Secondary ion mass spectrometry
- Silicon carbide
- C-V measurement
- Implanted samples
- Oxidation front
- Phosphorus ion implantations
- Thermal oxidation
- Phosphorus
Publication and Content Type
- ref (subject category)
- kon (subject category)
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