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- Sledziewski, TomaszLehrstuhl für Angewandte Physik, Germany (author)
Reduction of density of 4H-SiC/SiO2 interface traps by pre-oxidation phosphorus implantation
- Article/chapterEnglish2014
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- 2014
- printrdacarrier
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- LIBRIS-ID:oai:DiVA.org:ri-35508
- https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-35508URI
- https://doi.org/10.4028/www.scientific.net/MSF.778-780.575DOI
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- Language:English
- Summary in:English
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- The effect of phosphorus (P) on the electrical properties of the 4H-SiC/SiO2 interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found from C-V measurements. Conductance method measurements revealed a significant reduction of density of interface traps Dit with energy EC-Eit > 0.3 V for P+-implanted samples with [P]interface = 1.5 · 1018 cm-3 in the SiC layer at the interface. .
Subject headings and genre
- Conductance method
- Interface traps
- Mos interface
- Phosphorus ion implantation
- Electric properties
- Ion implantation
- Oxidation
- Secondary ion mass spectrometry
- Silicon carbide
- C-V measurement
- Implanted samples
- Oxidation front
- Phosphorus ion implantations
- Thermal oxidation
- Phosphorus
Added entries (persons, corporate bodies, meetings, titles ...)
- Mikhaylov, Aleksey I.RISE,Acreo,SPbETU 'LETI', Russia (author)
- Reshanov, Sergey A.Ascatron, Sweden (author)
- Schöner, AdolfRISE,Acreo,Ascatron, Sweden (author)
- Weber, Heiko B.Lehrstuhl für Angewandte Physik, Germany (author)
- Krieger, MichaelLehrstuhl für Angewandte Physik, Germany (author)
- Lehrstuhl für Angewandte Physik, GermanyAcreo (creator_code:org_t)
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- In:Materials Science Forum, s. 575-5789783038350101
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