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CMOS-integrated Si/SiGe quantum-well infrared microbolometer focal plane arrays manufactured with very large-scale heterogeneous 3-d integration

Forsberg, Fredrik (author)
KTH,Mikro- och nanosystemteknik,KTH Royal Institute of Technology, Sweden
Lapadatu, A. (author)
Sensonor AS, Norway
Kittilsland, G. (author)
Sensonor AS, Norway
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Martinsen, S. (author)
Sensonor AS, Norway
Roxhed, Niclas (author)
KTH,Mikro- och nanosystemteknik,KTH Royal Institute of Technology, Sweden
Fischer, A. C. (author)
KTH Royal Institute of Technology, Sweden
Stemme, G. (author)
KTH Royal Institute of Technology, Sweden
Samel, Björn (author)
RISE,Acreo
Ericsson, Peter (author)
RISE,Acreo
Hoivik, N. (author)
Vestfold University College, Norway
Bakke, T. (author)
SINTEF, Norway
Bring, M. (author)
Sensonor AS, Norway
Kvisteroy, T. (author)
Sensonor AS, Norway
Ror, A. (author)
Sensonor AS, Norway
Niklaus, Frank (author)
KTH,Mikro- och nanosystemteknik
Ericsson, Per (author)
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 (creator_code:org_t)
Institute of Electrical and Electronics Engineers Inc. 2015
2015
English.
In: IEEE Journal of Selected Topics in Quantum Electronics. - : Institute of Electrical and Electronics Engineers Inc.. - 0792-1233 .- 1077-260X .- 1558-4542. ; 21:4
  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • We demonstrate infrared focal plane arrays utilizing monocrystalline silicon/silicon-germanium (Si/SiGe) quantum-well microbolometers that are heterogeneously integrated on top of CMOS-based electronic read-out integrated circuit substrates. The microbolometers are designed to detect light in the long wavelength infrared (LWIR) range from 8 to 14 μm and are arranged in focal plane arrays consisting of 384 × 288 microbolometer pixels with a pixel pitch of 25 μm × 25 μm. Focal plane arrays with two different microbolometer designs have been implemented. The first is a conventional single-layer microbolometer design and the second is an umbrella design in which the microbolometer legs are placed underneath the microbolometer membrane to achieve an improved pixel fill-factor. The infrared focal plane arrays are vacuum packaged using a CMOS compatible wafer bonding and sealing process. The demonstrated heterogeneous 3-D integration and packaging processes are implemented at wafer-level and enable independent optimization of the CMOS-based integrated circuits and the microbolometer materials. All manufacturing is done using standard semiconductor and MEMS processes, thus offering a generic approach for integrating CMOS-electronics with complex miniaturized transducer elements

Subject headings

NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

Keyword

Long-wavelength infrared imaging
LWIR
MEMS
Si/SiGe quantum-wells
wafer-level vacuum packaging
thermal imaging
uncooled microbolometer
very large-scale heterogeneous 3-D integration
Bolometers
Chip scale packages
CMOS integrated circuits
Focal plane arrays
Focusing
Infrared detectors
Infrared devices
Infrared imaging
Infrared radiation
Integrated circuit design
Monocrystalline silicon
Pixels
Semiconductor quantum wells
Silicon wafers
Substrates
Temperature sensors
Thermography (imaging)
Three dimensional integrated circuits
VLSI circuits
Wafer bonding
3-D integration
Long-wavelength infrared
Uncooled microbolometers
Wafer level vacuum packaging
MOEMS

Publication and Content Type

ref (subject category)
art (subject category)

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