Epitaxial growth of by reactive high-power impulse magnetron sputtering

• Al2O3 was deposited by reactive high-power impulse magnetron sputtering at 600 C onto pre-deposited Ti2AlC(0001) thin films on Al2O3(0001) substrates. The Al2O 3 was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial γ-Al2O3(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of γ-Al 2O3 on Ti2AlC(0001) open prospects for growth of crystalline alumina as protective coatings on Ti2AlC and related nanolaminated materials. The crystallographic orientation relationships are γ-Al2O3(111)//Ti2AlC(0001) (out-of-plane) and Al2O3//Ti2AlC(112̄0)γ-Al 2O3(22̄0)// Ti 2 AlC (112̄0) (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 C resulted in partial decomposition of the Ti2AlC by depletion of Al and diffusion into and through the γ-Al2O3 layer.

Keyword

Annealing in vacuum

Crystallographic orientation relationships

Out-of-plane

Partial decomposition

Alumina

Epitaxial growth

Growth (materials)

Magnetron sputtering

Protective coatings

Transmission electron microscopy

Aluminum

Publication and Content Type

ref (subject category)

art (subject category)