Vertical GaN devices : Process and reliability

• This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density. © 2021

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

200 mm CMOS compatible

GaN-on-polyAlN

Power electronics

Vertical GaN device

CMOS integrated circuits

Gallium nitride

CMOS Compatible

CMOS-compatible technology

In-process

Optimisations

Performance

Power-electronics

Recent progress

III-V semiconductors

Publication and Content Type

ref (subject category)

art (subject category)