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Ceramic Additive Ma...
Ceramic Additive Manufacturing Potential for Power Electronics Packaging
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- Akbari, Saeed (author)
- RISE,Smart hårdvara
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- Kostov, Konstantin Stoychev (author)
- RISE,Smart hårdvara
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- Brinkfeldt, Klas (author)
- RISE,Smart hårdvara
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- Adolfsson, Erik (author)
- RISE,Tillverkningsprocesser
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- Lim, Jang-Kwon (author)
- RISE,Smart hårdvara
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- Andersson, Dag (author)
- RISE,Smart hårdvara
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- Bakowski, Mietek (author)
- RISE,Smart hårdvara
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- Wang, Qin (author)
- RISE,Smart hårdvara
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- Salter, Michael (author)
- RISE,Smart hårdvara
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers Inc. 2022
- 2022
- English.
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In: IEEE Transactions on Components, Packaging, and Manufacturing Technology. - : Institute of Electrical and Electronics Engineers Inc.. - 2156-3950 .- 2156-3985. ; 12:11, s. 1857-1866
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Compared with silicon-based power devices, wide band gap (WBG) semiconductor devices operate at significantly higher power densities required in applications such as electric vehicles and more electric airplanes. This necessitates development of power electronics packages with enhanced thermal characteristics that fulfil the electrical insulation requirements. The present research investigates the feasibility of using ceramic additive manufacturing (AM), also known as three-dimensional (3D) printing, to address thermal and electrical requirements in packaging gallium nitride (GaN) based high-electron-mobility transistors (HEMTs). The goal is to exploit design freedom and manufacturing flexibility provided by ceramic AM to fabricate power device packages with a lower junction-to-ambient thermal resistance (RθJA). Ceramic AM also enables incorporation of intricate 3D features into the package structure in order to control the isolation distance between the package source and drain contact pads. Moreover, AM allows to fabricate different parts of the packaging assembly as a single structure to avoid high thermal resistance interfaces. For example, the ceramic package and the ceramic heatsink can be printed as a single part without any bonding layer. Thermal simulations under different thermal loading and cooling conditions show the improvement of thermal performance of the package fabricated by ceramic AM. If assisted by an efficient cooling strategy, the proposed package has the potential to reduce RθJA by up to 48%. The results of the preliminary efforts to fabricate the ceramic package by AM are presented, and the challenges that have to be overcome for further development of this manufacturing method are recognized and discussed.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Ceramic additive manufacturing
- GaN HEMTs
- isolation distance
- power electronics packaging
- thermal resistance
- wide band gap semiconductors
- 3D printers
- Ceramic materials
- Chip scale packages
- Energy gap
- Fabrication
- Gallium nitride
- High electron mobility transistors
- III-V semiconductors
- Industrial research
- Thermal insulation
- Ceramic additives
- Ceramic package
- Gallium nitride high-electron-mobility transistor
- High electron-mobility transistors
- Power devices
- Silicon-based
- Wide-band-gap semiconductor
Publication and Content Type
- ref (subject category)
- art (subject category)
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