Scalable memory elements based on rectangular SIsFS junctions

• We explore the concept of the Josephson magnetic memory element based on a multilayer two-barrier SIsFS Josephson junction storing the digital state by means of the orientation of magnetization in the F-layer. A diluted PdFe alloy with 1% magnetic atoms is used as a ferromagnet (F), and a tunnel A1Ox layer (I) ensures a high voltage in the resistive state. We have studied two junctions of a rectangular shape in which two digital states are defined by the orientation of the residual F-layer magnetization set along or across the junction in the plane of the ferromagnetic barrier. Implementations of both binary and ternary logic elements are demonstrated. A scalability of rectangular memory elements is analyzed using micro-magnetic modeling.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Publication and Content Type

ref (subject category)

art (subject category)