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Calculations of ele...
Calculations of electron-impact excitation and dielectronic recombination rate coefficients of highly charged silicon ions
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Xie, L. Y. (author)
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Rui, J. L. (author)
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Zhang, J. M. (author)
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- Schuch, Reinhold (author)
- Stockholms universitet,Fysikum
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Dong, C. Z. (author)
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(creator_code:org_t)
- 2022
- 2022
- English.
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In: Physical Review A: covering atomic, molecular, and optical physics and quantum information. - 2469-9926 .- 2469-9934. ; 105:1
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The rate coefficients for dielectronic recombination and electron-impact excitation processes with H-like to Be-like silicon ions (Si13+−Si10+) are calculated using relativistic distorted-wave approach. The prominent △n=1 and the weaker △n=2 and 3 dielectronic recombination (DR) resonances with K-shell excitations are presented, and compared with the existing DR experimental rate coefficients of Si13+, Si12+, and Si11+ ions, it is found that the theoretical DR rate coefficients are in very good agreement with the experimental results. With the same approach, the direct and resonant electron-impact excitation (EIE) cross sections associated with 1s−n′l′ core excitations are calculated for the ground states of Si13+−Si10+ ions and found in excellent agreement with the available experiment. Finally, we present the synthesized DR and EIE rate coefficients for the sum of all detected (13+∼10+) charge states of Si and these agree well with the experimental results.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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