Calculations of electron-impact excitation and dielectronic recombination rate coefficients of highly charged silicon ions

Xie, L. Y. (author)

Rui, J. L. (author)

Zhang, J. M. (author)

Dong, C. Z. (author)

(creator_code:org_t)

2022
2022
English.
In: Physical Review A: covering atomic, molecular, and optical physics and quantum information. - 2469-9926 .- 2469-9934. ; 105:1

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

The rate coefficients for dielectronic recombination and electron-impact excitation processes with H-like to Be-like silicon ions (Si13+−Si10+) are calculated using relativistic distorted-wave approach. The prominent △n=1 and the weaker △n=2 and 3 dielectronic recombination (DR) resonances with K-shell excitations are presented, and compared with the existing DR experimental rate coefficients of Si13+, Si12+, and Si11+ ions, it is found that the theoretical DR rate coefficients are in very good agreement with the experimental results. With the same approach, the direct and resonant electron-impact excitation (EIE) cross sections associated with 1s−n′l′ core excitations are calculated for the ground states of Si13+−Si10+ ions and found in excellent agreement with the available experiment. Finally, we present the synthesized DR and EIE rate coefficients for the sum of all detected (13+∼10+) charge states of Si and these agree well with the experimental results.

By the author/editor: Xie, L. Y.; Rui, J. L.; Zhang, J. M.; Schuch, Reinhold; Dong, C. Z.

About the subject

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