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  • Schiros, TheanneStockholms universitet,Fysikum,Kvantkemi (author)

The Role of Substrate Electrons in the Wetting of a Metal Surface

  • Article/chapterEnglish2010

Publisher, publication year, extent ...

  • AIP Publishing,2010
  • printrdacarrier

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  • LIBRIS-ID:oai:DiVA.org:su-47089
  • https://urn.kb.se/resolve?urn=urn:nbn:se:su:diva-47089URI
  • https://doi.org/10.1063/1.3292681DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • authorCount :7
  • We address how the electronic and geometric structures of metal surfaces determine water-metal bonding by affecting the balance between Pauli repulsion and electrostatic attraction. We show how the rigid d-electrons and the softer s-electrons utilize different mechanisms for the redistribution of charge that enables surface wetting. On open d-shell Pt(111), the ligand field of water alters the distribution of metal d-electrons to reduce the repulsion. The closed-shell Cu d10 configuration of isostructural Cu(111), however, does not afford this mechanism, resulting in a hydrophobic surface and three-dimensional ice cluster formation. On the geometrically corrugated Cu(110) surface, however, charge depletion involving the mobile sp-electrons at atomic rows reduces the exchange repulsion sufficiently such that formation of a two-dimensional wetting layer is still favored in spite of the d10 electronic configuration

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  • Takahashi, OsamuStockholms universitet,Fysikum(Swepub:su)osta4655 (author)
  • Andersson, Klas J.Haldor-Topsoe (author)
  • Öström, HenrikStockholms universitet,Fysikum,Molekylfysik(Swepub:su)ostrom (author)
  • Pettersson, Lars G.M.Stockholms universitet,Fysikum,Kvantkemi(Swepub:su)lgm (author)
  • Nilsson, AndersStockholms universitet,Fysikum,Kvantkemi(Swepub:su)andersn (author)
  • Ogasawara, HirohitoStockholms universitet,Fysikum (author)
  • Stockholms universitetFysikum (creator_code:org_t)

Related titles

  • In:Journal of Chemical Physics: AIP Publishing132:9, s. 094701-0021-96061089-7690

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