Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI

• This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the lon /Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

MOSFET

Schottky barriers

ion implantation

silicon-on-insulator

PtSi-Si

Schottky barrier source/drain MOSFET

dopant segregation

leakage current

metal-oxide-semiconductor field effect transistor

silicon implantation

silicon on insulator

ultrathin body SOI

underlap length

PtSi

Si implantation

dopant segregation

schottky barrier-MOSFET

underlap length

Physics

Fysik

Publication and Content Type

ref (subject category)

kon (subject category)