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The Atomic Layer De...
The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source
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Dezelah, Charles L. (author)
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Niinisto, Jaakko (author)
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Kukli, Kaupo (author)
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Munnik, Frans (author)
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- Lu, Jun (author)
- Uppsala universitet,Tillämpad materialvetenskap
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Ritala, Mikko (author)
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Leskela, Markku (author)
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Niinisto, Lauri (author)
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(creator_code:org_t)
- Wiley, 2008
- 2008
- English.
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In: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 14:11-12, s. 358-365
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The atomic layer deposition (ALD) of HfO2 and ZrO2 thin films is investigated using (MeCp)(2)HfMe2, (MCp)(2)Hf(OMe)(Me), (MeCp)(2)ZrMe2, and (MeCp)(2)Zr(OMe)(Me) as the precursors at deposition temperatures between 300 and 500 degrees C, with water vapor as the oxygen Source. A self-limiting growth mechanism is confirmed at 350 degrees C for all the metal precursors examined. The processes provide nearly stoichiometric HfO2 and ZrO2 films with carbon and hydrogen concentrations below 0.5 and 1.0 at.-%, respectively, for representative samples. All films are polycrystalline as deposited, and possess a thin interfacial SiO2 layer. The capacitance-voltage (C-V) and Current density-voltage (I-V) behavior is reported and discussed for capacitor structures containing films from this study.
Keyword
- ALD
- cyclopentadienyl complexes
- hafnium oxide
- high-k dielectric
- thin film
- zirconium oxide
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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