Search: onr:"swepub:oai:DiVA.org:uu-133851" >
Simulation of hydro...
Simulation of hydrogenated graphene field-effect transistors through a multiscale approach
-
Fiori, G. (author)
-
Lebegue, S. (author)
-
Betti, A. (author)
-
show more...
-
Michetti, P. (author)
-
- Klintenberg, Mattias (author)
- Uppsala universitet,Materialteori
-
- Eriksson, Olle (author)
- Uppsala universitet,Materialteori
-
Iannaccone, G. (author)
-
show less...
-
(creator_code:org_t)
- 2010
- 2010
- English.
-
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 82:15, s. 153404-
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- In this work, we present a performance analysis of field-effect transistors (FETs) based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semihydrogenated graphene (i.e., graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor sp(3) tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large I-on and I-on/I-off ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Physics
- Fysik
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database