Localised modifications of anatase TiO2 thin films by a Focused Ion Beam

• A Focused Ion Beam (FIB) has been used to implant micrometer-sized areas of polycrystalline anatase TiO2 thin films with Ga+ ions using fluencies from 10(15) to 10(17) ions/cm(2). The evolution of the surface morphology was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, the chemical modifications of the surface were followed by X-ray photoelectron spectroscopy (XPS). The implanted areas show a noticeable change in surface morphology as compared to the as-deposited surface. The surface loses its grainy morphology to gradually become a smooth surface with a RMS roughness of less than 1 nm for the highest ion fluence used. The surface recession or depth of the irradiated area increases with ion fluence, but the rate with which the depth increases changes at around 5 x 10(16) ions/cm(2). Comparison with implantation of a pre-irradiated surface indicates that the initial surface morphology may have a large effect on the surface recession rate. Detailed analysis of the XPS spectra shows that the oxidation state of Ti and O apparently does not change, whereas the implanted gallium exists in an oxidation state related to Ga2O3.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Annan teknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies (hsv//eng)

NATURVETENSKAP  -- Fysik -- Subatomär fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Subatomic Physics (hsv//eng)

Keyword

Ion implantation

Focused Ion Beam

Titanium dioxide

Galium oxide

Thin films

Physics

Fysik

Engineering physics

Teknisk fysik

Ion physics

Publication and Content Type

ref (subject category)

art (subject category)