Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness

Gao, Xindong (author): Uppsala universitet,Fasta tillståndets elektronik,Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala

Andersson, Joakim (author): Uppsala universitet,Fasta tillståndets elektronik,Thin Films Group,Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala

Kubart, Tomas (author): Uppsala universitet,Fasta tillståndets elektronik,Thin Films Group,Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala

Nyberg, Tomas (author): Uppsala universitet,Fasta tillståndets elektronik,Thin Films Group,Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala

Smith, Ulf (author): Uppsala universitet,Fasta tillståndets elektronik,Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala

Hultman, Lars (author): Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan

Kellock, Andrew J (author): IBM Almaden Research Center, San Jose, CA, USA,IBM Almaden Research Center, San Jose, California, USA

Zhang, Zhen (author): IBM T.J. Watson Research Center, Yorktown Heights, New York , USA

Lavoie, Christian (author): IBM T.J. Watson Research Center, Yorktown Heights, New York , USA

Zhang, Shi-Li (author): Uppsala universitet,Fasta tillståndets elektronik,Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala

(creator_code:org_t)

The Electrochemical Society, 2011
2011
English.
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 14:7, s. H268-H270

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; https://urn.kb.se/re...; show less...

Abstract Subject headings

This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 mu Omega cm.

By the author/editor: Gao, Xindong; Andersson, Joaki ...; Kubart, Tomas; Nyberg, Tomas; Smith, Ulf; Lu, Jun; show more...; Hultman, Lars; Kellock, Andrew ...; Zhang, Zhen; Lavoie, Christia ...; Zhang, Shi-Li; show less...

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